We prepared germanium-on-insulator (GOI) substrates
by using Smart-Cut™ and wafer bonding technology. The fabricated GOI is
appropriate for polishing due to a strong bonding strength (2.4 MPa) and a
sufficient bonding quality. We investigated mechanical polishing and
chemical—mechanical polishing (CMP) systematically, and an appropriate
polishing method—mechanical polishing combined with CMP—is obtained. As shown
by AFM measurement, the RMS of GOI after polishing decreased to 0.543 nm. And
the Ge peak profile of the XRD curve became symmetric, and the FWHM is about
121.7 arcsec, demonstrating a good crystal quality.
Source:IOPscience
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