Germanium carbide (Ge1−xCx) films have been prepared by RF
reactive sputtering a pure Ge(111) target at different flow rate ratios of
CH4/(CH4+Ar) in a CH4/Ar mixture discharge, and it has been found that the
composition, chemical bonding, optical and mechanical properties of
Ge1−xCx films are remarkably influenced by the flow rate ratio of
CH4/(CH4+Ar). The effects of the chemical bonding on the optical and mechanical
properties of the Ge1−xCx films have been explored. In addition, an
antireflection Ge1−xCx double-layer coating deposited on both sides of the
ZnS substrate wafer has been developed for application as an infrared window.
It is shown that the transmittance in the wavelength region between 8 and
12 µm and the hardness of the ZnS substrate have been significantly
improved by the double-layer coating.
Source:IOPscience
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