The effect of germanium doping on oxygen donors in Czochralski-grown silicon

In this paper the effect of germanium doping on oxygen donors in Czochralski (CZ) silicon has been investigated. It is found that germanium suppresses the formation of thermal donors during annealing at 450 °C, as a result of the reaction of Ge with point defects in CZ silicon. Meanwhile, it is clarified that germanium enhances the formation of new donors in CZ silicon, which is proposed to be a process associated with the nucleation enhancement of oxygen precipitation by germanium doping.

Source:iopscience

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Graphene Makes Infinite Copies of Compound Semiconductor Wafers

In order to grow semiconductors with minimal defects on top of silicon, the most important requirement is to ensure that the size of the crystal lattice of the film to be grown is similar to the crystal lattice of silicon, sometimes referred to as lattice matching. Unfortunately, germanium atoms are a lot larger than silicon atoms, so if you were to grown pure germanium crystals on top of silicon, the difference in the size of crystal lattice would cause lots of defects in the germanium crystals.

Source:Ieee

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