Germanium Substrate of Optical Grade

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of Germanium Substrate materials and other related products and services, can provide Germanium Substrate of Optical Grade in different size.And now PAM-XIAMEN offer specification as follows:

SL.No	Material Specifications:
1	Crystalline Form :	Polycrystalline
2	Conductivity Type :	n-type
3	Absorption Coefficient, at 25°C	0.035cm-1 max @ 10.6µm
4	Typical Resistivity :	3-40 ohm-cm
5	Density :	5.3 g/cc
6	Mohs Hardness :	6.3
7	Oxygen Content :	< 0.03 ppm
8	Holes and Inclusions:	<0.05 mm
9	Poisson Ratio :	0.278
10	Youngs Modulus (E) :	100 Gpa

SL.No	Optical Properties:
1	dn/dt  from 250-350 K :	4 X 10-4 K-1
2	Transmission at 25°C @10.6 µm wavelength
	for uncoated sample of thickness 10mm :	Max. 47% or more
3	Refractive Index @ 10.8 µm :	4.00372471±0.0005
4	Inhomogeneity of the Index :	2 X 10-4

                                                                                                                                                                            

SL.No	Thermal Properties
1	Melting Point (K) :	1210.4
2	Heat Capacity @ 300K (J/kg.K):	322
3	Thermal Conductivity @293 K :	59 Wm-1 K-1
4	Coefficient Thermal Expansion @ (20°C) (10-6 K):	5.8

For more information, please visit our website:www.powerwaywafer.com, send us email at sales@powerwaywafer.com  or powerwaymaterial@gmail.com

Germanium on sapphire by wafer bonding

This paper describes the creation of a germanium on sapphire platform, via wafer bonding technology, for system-on-a-chip applications. Similar thermal coefficients of expansion between germanium (5.8 × 10−6 K−1) and sapphire (5 × 10−6 K−1) make the bonding of germanium to sapphire a reality. Germanium directly bonded to sapphire results in microvoid generation during post bond annealing. Inclusion of an interface layer such as silicon dioxide layer by plasma enhanced chemical vapour deposition, prior to bonding, results in a microvoid free bond interface after annealing. Grinding and polishing of the subsequent germanium layer has been achieved leaving a thick germanium on sapphire (GeOS) substrate. Submicron GeOS layers have also been achieved with hydrogen/helium co-implantation and layer transfer. Circular geometry transistors exhibiting a field effect mobility of 890 cm2/V s have been fabricated onto the thick germanium on sapphire layer.

Keywords:Germanium; Sapphire; Wafer bonding

Characteristics of Germanium-on-Insulators Fabricated by Wafer Bonding and Hydrogen-Induced Layer Splitting

There is considerable interest in germanium-on-insulator (GeOI) because of its advantages in terms of device performance and compatibility with silicon processing. In this paper, fabricating GeOI by hydrogen-induced layer splitting and wafer bonding is discussed.

Hydrogen in germanium exists in molecular form and is prone to outdiffusion, resulting in a storage-time dependence of blistering. In contrast to the case of silicon, little effect of substrate doping on blistering is observed in germanium. Hydrogen implantation in germanium creates both {100}- and {111}-type microcracks. These two types of platelets are located in the same region for (111)-oriented wafers, but in different zones for (100) samples. This variation in distribution explains the smoother splitting of (111) surfaces than that of (100) surfaces. Hydrogen implantation also introduces a significant concentration of charged vacancies, which affect dopant diffusion in the transferred germanium film. Boron, with a negligible Fermi-level dependence, shows an identical diffusion profile to that of bulk germanium. In contrast, phosphorus diffusion is enhanced in the fabricated GeOI layers.

These results also shed light on the understanding of dopant diffusion mechanisms in germanium.

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