Deposition of copper, silver and gold from aqueous solutions onto germanium substrates via galvanic displacement

Deposition of copper, silver and gold from aqueous solutions onto germanium substrates is studied in this work. For this purpose both acidic and alkaline solutions were used. All investigated metals can successfully be deposited via the galvanic displacement reaction. These deposits are porous and with different surface morphologies which depended on the type (p- or n-) of the Ge substrate used in the experiments and on pH. Prolonged times of immersion of Ge substrates into investigated solutions may lead to a formation of more porous coatings and even powders, as successfully demonstrated on the example of silver. It is believed that the approach presented in this work should further be investigated as an activation step for a possible metallization of Ge substrates via autocatalytic or electrodeposition methods.

Source:Electrochimica Acta

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Germanium on insulator near-infrared photodetectors fabricated by layer transfer

We report on novel pn Ge photodetectors fabricated on glass. The fabrication consists of wafer bonding and layer splitting, followed by a low-temperature epitaxial growth of Ge. The photodiodes are characterized in terms of dark current and responsivity, and their performance compared with devices realized on either Ge or Si. The minimum current density is 50 μA/cm² at 1 V reverse bias, the responsivity is 0.2 A/W in the photovoltaic mode, with a maximum of 0.28 A/W at 1.55 μm at a reverse voltage of 5 V.

Source:Thin Solid Films

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This paper describes the creation of a germanium on sapphire platform, via wafer bonding technology, for system-on-a-chip applications. Similar thermal coefficients of expansion between germanium (5.8 × 10⁻⁶ K⁻¹) and sapphire (5 × 10⁻⁶ K⁻¹) make the bonding of germanium to sapphire a reality. Germanium directly bonded to sapphire results in microvoid generation during post bond annealing. Inclusion of an interface layer such as silicon dioxide layer by plasma enhanced chemical vapour deposition, prior to bonding, results in a microvoid free bond interface after annealing. Grinding and polishing of the subsequent germanium layer has been achieved leaving a thick germanium on sapphire (GeOS) substrate. Submicron GeOS layers have also been achieved with hydrogen/helium co-implantation and layer transfer. Circular geometry transistors exhibiting a field effect mobility of 890 cm²/V s have been fabricated onto the thick germanium on sapphire layer.

Source:Solid-State Electronics

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