We report on novel pn Ge
photodetectors fabricated on glass. The fabrication consists of wafer bonding
and layer splitting, followed by a low-temperature epitaxial growth of Ge. The
photodiodes are characterized in terms of dark current and responsivity, and
their performance compared with devices realized on either Ge or Si. The
minimum current density is 50 μA/cm2 at 1 V
reverse bias, the responsivity is 0.2 A/W in the photovoltaic mode, with a
maximum of 0.28 A/W at 1.55 μm at a reverse voltage of 5 V.
Source:Thin
Solid Films
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