There
is considerable interest in germanium-on-insulator (GeOI) because of its
advantages in terms of device performance and compatibility with silicon
processing. In this paper, fabricating GeOI by hydrogen-induced layer splitting
and wafer bonding is discussed. Hydrogen in germanium exists in molecular form
and is prone to outdiffusion, resulting in a storage-time dependence of
blistering. In contrast to the case of silicon, little effect of substrate
doping on blistering is observed in germanium. Hydrogen implantation in
germanium creates both {100}- and {111}-type microcracks. These two types of
platelets are located in the same region for (111)-oriented wafers, but in
different zones for (100) samples. This variation in distribution explains the
smoother splitting of (111) surfaces than that of (100) surfaces. Hydrogen
implantation also introduces a significant concentration of charged vacancies,
which affect dopant diffusion in the transferred germanium film. Boron, with a
negligible Fermi-level dependence, shows an identical diffusion profile to that
of bulk germanium. In contrast, phosphorus diffusion is enhanced in the
fabricated GeOI layers. These results also shed light on the understanding of
dopant diffusion mechanisms in germanium.
Source:IOPscience
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