It is proposed and investigated a method for
growing thin uniform germanium layers onto large silicon substrates. The
technique uses the hexagonally arranged local sources filled with liquid
germanium. Germanium evaporates on very close substrate and in these conditions
the residual gases vapor pressure highly reduces. It is shown that to achieve
uniformity of the deposited layer better than 97% the critical thickness of the
vacuum zone must be equal to l cr = 1.2 mm for a hexagonal arranged system of
round local sources with the radius of r = 0.75 mm and the distance between the
sources of h = 0.5 mm.
Source:IOPscience
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