This
paper investigates the slicing of germanium wafers from single crystal,
gallium-doped ingots using wire electrical discharge machining. Wafers with a
thickness of 350 μm and a diameter of 66 mm were cut using 75 and
100 μm molybdenum wire. Wafer characteristics resulting from the process
such as the surface profile and texture are analyzed using a surface profiler
and scanning electron microscopy. Detailed experimental investigation of the
kerf measurement was performed to demonstrate minimization of material wastage
during the slicing process using WEDM in combination with thin wire diameters.
A series of timed etches using two different chemical etchants were performed
on the machined surfaces to measure the thickness of the recast layer. Cleaning
of germanium wafers along with its quality after slicing is demonstrated by
using Raman spectroscopy.
Source:
Journal of Materials Processing Technology
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you need more information about Slicing, cleaning and kerf analysis of
germanium wafers machined by wire electrical discharge machining, please visit
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