Feb 25, 2020

Advanced Characterization of a Direct Wafer Bonding-compatible Germanium Exfoliation Process

In this study, it is demonstrated that the propagation of long-range cracks in hydrogen-implanted germanium with a low-temperature exfoliation process (300 {degree sign}C max) is as complete as with conventional exfoliation processes that take place at higher temperatures. Such low-temperature exfoliation process is fully compliant with direct silicon to germanium wafer bonding. It allows for limited lattice deformation - enhanced bond strength i.e. - and limited voids formation at the bond interface during post-bonding anneal.


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