Gaseous Diffusion of Arsenic and Phosphorus into Germanium

Presence of germanium arsenide was found at the germanium surface, particularly at arsenic surface concentrations exceeding 1019 at./cc, using electron diffraction techniques. Thermal conversion of the interior of the germanium wafers (which were 15 ohm‐cm N‐type) to P‐type could be suppressed by arsenic surface concentrations exceeding 5.1018 at./cc. This elimination of thermal conversion depends on the surface to volume ratio of the wafer. It is proposed that the thermal conversion level in the bulk of the indiffused material depends on the electric field which arises during diffusion if the impurity concentration exceeds the intrinsic carrier concentration.

Source:IOPscience

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