In this paper, we have proposed and simulated
one novel Schottky barrier germanium-based MOSFET structure. Herein, the
source/drain region of the device is consisted with two stacked layers of
germanide materials. Different barrier heights of the top and bottom contact
are hence formed with channel respectively. The top barrier height is designed
lower enough to enlarge drive current, and the bottom barrier height is higher
(nearly mid-gap) to diminish the leakage current. The working mechanism and the
performance of n- and p-type devices is studied. Comparisons between dual
barrier structure and single barrier structure are also carried out. The
results show that the characteristics have been significantly enhanced with the
proposed dual barrier structure. Besides, the devices' performance is nearly
insensitive to germanium thickness, which leads to the relax of the requirement
of germanium-on-insulator (GeOI) structures for leakage immunization.
Source:IOPscience
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