The characterization of detectors fabricated
from home-grown crystals is the most direct way to study crystal properties. We
fabricated planar detectors from high-purity germanium (HPGe) crystals grown at
the University of South Dakota (USD). In the fabrication process, a HPGe
crystal slice cut from a USD-grown crystal was coated with a high resistivity
thin film of amorphous Ge (a-Ge) followed by depositing a thin layer of
aluminum on top of the a-Ge film to define the physical area of the contacts.
We investigated the detector performance including the I-V characteristics, C-V
characteristics and spectroscopy measurements for a few detectors. The results
document the good quality of the USD-grown crystals and electrical contacts.
Source:IOPscience
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