High performance n+/p and p+/n germanium diodes at low-temperature activation annealing

In this work we demonstrate the fabrication and characterization of high performance junction diodes using annealing temperatures within the temperature range of 300–350 °C. The low temperature dopant activation was assisted by a 50 nm platinum layer which transforms into platinum germanide during annealing. The fabricated diodes exhibited high forward currents, in excess of 400 A/cm² at ∼|0.7| V for both p⁺/n and n⁺/p diodes, with forward to reverse ratio I_F/I_R greater than 10⁴. Best results for the n⁺/p junctions were obtained at the lower annealing temperature of 300 °C. These characteristics compare favorably with the results of either conventional or with Ni or Co assisted dopant activation annealing. The low-temperature annealing in combination with the high forward currents at low bias makes this method suitable for high performance/low operating power applications, utilizing thus high mobility germanium substrates.

Source: Microelectronic Engineering

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