Nov 19, 2019

Annealing Effects on Ge/SiO2 Interface Structure in Wafer-Bonded Germanium-on-Insulator Substrates

We have investigated annealing effects on Ge/SiO2 interfaces in wafer-bonded germanium-on-insulator substrates using transmission electron microscopy and electron energy loss spectroscopy. A number of nanometer-sized hollows were observed at the Ge/SiO2 interfaces after annealing at 500 and 600 °C, while the density of these hollows was very small after annealing at 700 and 800 °C. The hollows are attributed to the formation of amorphous oxides of Si-rich Si1-xGexO2. The mechanism for the formation and disappearance of these amorphous hollows on the Ge substrates is discussed.

For more information, please visit our website:,
send us email at and

1 comment:

  1. Casinos Near Casinos in Las Vegas, NV - MapYRO
    MapYRO provides accurate, unbiased and 경상남도 출장마사지 unbiased 논산 출장샵 casino 여주 출장샵 reviews. Find the best casinos in las vegas, 춘천 출장샵 NV, 대구광역 출장샵 89449.