Smooth and fully relaxed highly boron-doped
germanium layers were grown directly on Si(001) substrates using carbon-mediated
epitaxy. A doping level of was measured
by several methods. Using high-resolution x-ray diffraction we observed
different lattice parameters for intrinsic and highly boron-doped samples. A
lattice parameter of a Ge:B = 5.653 Å was calculated using the results obtained
by reciprocal space mapping around the (113) reflection and the model of
tetragonal distortion. The observed lattice contraction was adapted and brought
in accordance with a theoretical model developed for ultra-highly boron-doped
silicon. Raman spectroscopy was performed on the intrinsic and doped samples. A
shift in the first order phonon scattering peak was observed and attributed to
the high doping level. A doping level of
was calculated by comparison with literature. We also observed a
difference between the intrinsic and doped sample in the range of second order
phonon scattering. Here, an intense peak is visible at for the doped samples. This peak was
attributed to the bond between germanium and the boron isotope 11B.
Source:IOPscience
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