Dec 24, 2018

Formation of Tensilely Strained Germanium-on-Insulator

We fabricate a high-quality germanium-on-insulator (GOI) with tensile strain by combining the wafer bonding of a strained Ge grown on a Si substrate and an oxidized Si substrate and the selective etching of Si. The obtained 300-nm-thick strained GOI shows a smooth surface with RMS roughness of 0.15 nm and no dislocation is detected by cross-sectional transmission electron microscopy (XTEM). The tensile strain of 0.19% induced in the GOI is found to be maintained throughout the fabrication process. This suggests that the fabricated strained GOI has a high potential as an essential platform for high-performance electronic and optical devices.


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