In this paper the effect of germanium doping on oxygen donors in Czochralski (CZ) silicon has been investigated. It is found that germanium suppresses the formation of thermal donors during annealing at 450 °C, as a result of the reaction of Ge with point defects in CZ silicon. Meanwhile, it is clarified that germanium enhances the formation of new donors in CZ silicon, which is proposed to be a process associated with the nucleation enhancement of oxygen precipitation by germanium doping.
Source:iopscience
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