We have applied quinhydrone/methanol (Q/M) treatment to germanium (Ge) surfaces and shown that this treatment is also effective for passivating Ge surfaces for minority carrier lifetime measurements. Surface recombination velocity (S) of less than 20 cm/s has been obtained, which enables us to accurately evaluate the bulk lifetime of minority carriers, τb, in Ge wafers. To the best of our knowledge, this is the first report on wet chemical treatment successfully applied to Ge surfaces achieving low values of S. The effects of quinhydrone concentration and passivation time on the results of lifetime measurements are described and discussed.
No comments:
Post a Comment