Study of the impact of doping concentration and Schottky barrier height on ohmic contacts to n-type germanium

Abstract

Ohmic contacts to n-type germanium have been fabricated and a very low specific contact resistance has been obtained using laser annealing activation of the implanted dopant atoms. A model is presented to understand the current mechanism at the metal/germanium interface, and to study the impact of the doping concentration and Schottky barrier height on the specific contact resistance of the ohmic contacts.

Graphical abstract

Keywords

Germanium

Ohmic contacts

Source:ScienceDirect

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