We prepared germanium-on-insulator (GOI) substrates by using Smart-Cut and wafer bonding technology. The fabricated GOI is appropriate for polishing due to a strong bonding strength (2.4 MPa) and a sufficient bonding quality. We investigated mechanical polishing and chemical—mechanical polishing (CMP) systematically, and an appropriate polishing method—mechanical polishing combined with CMP—is obtained. As shown by AFM measurement, the RMS of GOI after polishing decreased to 0.543 nm. And the Ge peak profile of the XRD curve became symmetric, and the FWHM is about 121.7 arcsec, demonstrating a good crystal quality.
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