Impact of channel thickness on the relocation of valleys in nano silicon and germanium DG-MOSFETs with alternative wafer orientation

Highlights

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Generalized effective mass tensor and non-equilibrium Green’s function are used to study the device.

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By varying the channel thickness, the valleys are supplanted.

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Si(110) has the maximum on-current and Ge(111) has the minimum on-current.

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In the maximum quantum confinement, the valleys with higher m_z, have the most portion of the current.

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In the case of higher channel thickness, most portion of the current tends tooccupy the bulk valleys.

Abstract

In this paper, a detailed simulation study of the channel thickness on the relocation valleys in double gate germanium and silicon MOSFETs with alternative wafer orientation is presented. Quantum simulation is performed based on self-consistent solutions of 2D Poisson’s equation and Schrodinger equation with a generalized effective mass approach, within the non-equilibrium Green’s function formalism. The effects channel thickness on the relocation of valleys are studied by focusing on the maximum subband potential, subband occupancy, subthreshold swing and on current for alternative wafer orientation. The results illustrate that the channel thickness supplants the valleys and their occupations that lead to different value of on current for every wafer orientation.

Keywords

• DG MOSFETs; 
• Non-equilibrium Green’s function; 
• Channel thickness; 
• Wafer orientation; 
• Valleys
• • • • Source:Sciencedirect 
        
        
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