Oxygen-containing germanium (Ge) single crystals with low
density of grown-in dislocations were grown by the Czochralski (CZ) technique
from a Ge melt, both with and without a covering by boron oxide (B2O3)
liquid. Interstitially dissolved oxygen concentrations in the crystals were
determined by the absorption peak at 855 cm−1 in the
infrared absorption spectra at room temperature. It was found that oxygen
concentration in a Ge crystal grown from melt partially or fully covered with B2O3 liquid
was about 1016 cm−3 and was almost the same as
that in a Ge crystal grown without B2O3. Oxygen
concentration in a Ge crystal was enhanced to be greater than 1017 cm−3 by
growing a crystal from a melt fully covered with B2O3;
with the addition of germanium oxide powder, the maximum oxygen concentration
achieved was 5.5×1017 cm−3. The effective
segregation coefficients of oxygen in the present Ge crystal growth were
roughly estimated to be between 1.0 and 1.4.
Source:
Journal of Crystal Growth
If
you need more information about Czochralski-growth of germanium crystals
containing high concentrations of oxygen impurities, please visit our website:http://www.germaniumwafers.com,
send us email at powerwaymaterial@gmail.com.
No comments:
Post a Comment