Nov 27, 2013

Surface analysis of thermally annealed germanium substrate for use in thin film multicolor solar cells

The Kelvin method and Auger effect have been used to study the efficiency of thermal annealing in situunder H2 at 350 and 650 °C of germanium substrates, chemically etched with CP4 and HNO3-HF, for use in multicolor solar cells. This is done by specifying the state of the surface and evaluating the impurities localized on it. The work functions of two samples, differently etched and annealed, are also plotted. The surface analyses are performed before and after annealing at the chosen temperatures.
The results obtained show that thermal annealing at such temperatures (350 and 650 °C) has the advantage of increasing the work functions of the samples, making them uniform across the surface, and reducing impurity concentration on the surface of the samples. However, an oxide layer occurs on the surfaces after annealing (especially after annealing at 650 °C) which results in a surface defect in the form of a broken region in the work function.
Source:Solar Cells

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