The Kelvin method and
Auger effect have been used to study the efficiency of thermal annealing in
situunder H2 at 350 and 650 °C of germanium substrates, chemically etched with CP4 and HNO3-HF, for use in
multicolor solar cells. This is done by specifying the state of the surface and
evaluating the impurities localized on it. The work functions of two samples,
differently etched and annealed, are also plotted. The surface analyses are
performed before and after annealing at the chosen temperatures.
The results obtained show that thermal annealing at such temperatures
(350 and 650 °C) has the advantage of increasing the work functions of the
samples, making them uniform across the surface, and reducing impurity
concentration on the surface of the samples. However, an oxide layer occurs on
the surfaces after annealing (especially after annealing at 650 °C) which
results in a surface defect in the form of a broken region in the work function.
Source:Solar
Cells
If you need more information about Surface analysis of thermally annealed germanium substrate for use in thin film multicolor solar cells, please visit our website:http://www.germaniumwafers.com/, send us email at powerwaymaterial@gmail.com.
If you need more information about Surface analysis of thermally annealed germanium substrate for use in thin film multicolor solar cells, please visit our website:http://www.germaniumwafers.com/, send us email at powerwaymaterial@gmail.com.
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